| PART |
Description |
Maker |
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD1042H09 |
1 GHz, 23 dB gain high output power doubler
1 GHz, 23 dB gain high output power doubler
|
NXP Semiconductors
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LD7213L LD7213 |
14 GHz / 300 W CW / CONDUCTION COOLING / HIGH POWER GAIN / FLAT GAIN VARIATION
14 GHz, 300 W CW, CONDUCTION COOLING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC Corp.
NEC[NEC]
|
| CGD1044H09 CGD1044H |
1 GHz, 25 dB gain high output power doubler
|
NXP Semiconductors
|
| SST12LF02 SST12LF02-QXCE |
2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
|
Microchip Technology
|
| RFMA5065-1W-Q7 |
5.0 - 6.5 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA5880-0.5W-Q7 |
5.8 - 8.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
