| PART |
Description |
Maker |
| U1BC44 U1GC44 U1JC44 |
RECTIFIER SILICON DIFFUSED JUNCTION TYPE FOR HYBRID USE
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| 1GU42 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
|
TOSHIBA
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| U05G4B48 U05B4B48 U05J4B48 |
Silicon Diffused Type Rectifier Stack
|
GOOD-ARK[GOOD-ARK Electronics]
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| U05B4B48 U05G4B48 |
(U05x4B48) Silicon Diffused Type Rectifier Stack
|
GOOD-ARK Electronics
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
|
| DSA26 DSA26G |
Diffused Junction Type Silicon Diode 2.6A Power Rectifier
|
SANYO
|
| DS135 |
Diffused Junction Type Silicon Diode 1.0A Power Rectifier
|
SANYO
|
|
