| PART |
Description |
Maker |
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR Rugged Series Power MOSFETs - N-Channel TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6.8AI(四)|47 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 5.4AI(四)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 4A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 2.25AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 1.35AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp. Intersil, Corp. Infineon Technologies AG Fairchild Semiconductor, Corp.
|
| FY8AAJ-03F |
Power MOSFETs: FY Series TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
|
Mitsubishi Electric Corporation
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| PMBFJ309T/R |
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 12MA I(DSS) | TO-236 晶体管|场效应| N沟道| 25V的五(巴西)直| 12mA的我(直)|36
|
NXP Semiconductors N.V.
|
| FC11E |
TRANSISTOR | JFET | N-CHANNEL | DUAL | 40V V(BR)DSS | 2.5MA I(DSS) | SOT-25 晶体管|场效应| N沟道|双| 40V的五(巴西)直| 2.5mA的我(直)|采用SOT - 25
|
Linear Technology, Corp.
|
| IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 3A条(丁)| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
| TMPFBC264A TMPFBC264B TMPFBC264C TMPFBC264D TMPFBF |
TRANSISTOR | JFET | N-CHANNEL | 4.5MA I(DSS) | TO-236 TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-236 TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | TO-236 TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | TO-236 TRANSISTOR | JFET | N-CHANNEL | 140MA I(DSS) | TO-236 TRANSISTOR | JFET | N-CHANNEL | 13MA I(DSS) | TO-236
|
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五(巴西)直| 5.5AI(四)|计划生育 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五(巴西)直| 8A条(丁)|计划生育
|
Mitsubishi Electric, Corp.
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五(巴西)直| 15mA的我(直)|芯片 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp. NEC[NEC]
|
| SI210706 SI2108-X-FM |
SATELLITE RECEIVER FOR DVB-S/DSS SPECIALTY TELECOM CIRCUIT, QCC44 SATELLITE RECEIVER FOR DVB-S/DSS WITH QUICKLOCK AND QUICKSCAN
|
Silicon Laboratories, Inc.
|
| IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 6.7AI(四)|63AB
|
Sumida, Corp.
|