| PART |
Description |
Maker |
| HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N1 |
From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
|
| IRFI460 IRFI460-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=500V/ Rds(on)=0.27ohm/ Id=21A)
TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
| IRFP9140 |
Trans MOSFET P-CH 100V 21A 3-Pin(3 Tab) TO-247AC
|
Vishay Siliconix
|
| 4TL1-1A |
TL Series Toggle Switch, 4 pole, 3 position, Screw terminal, Locking Lever, Military Part Number MS24660-21A
|
Honeywell
|
| 1130-6R8M 1130-560K 1130-1R0M |
Leaded Choke; Series:1130; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.004ohm; Leaded Process Compatible:No
1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Leaded Choke; Series:1130; Inductance:1uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:No
|
BOURNS INC
|
| BUZ30A BUZ30AC67078-S1303A3 |
Door actuator driver
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.13 Ohm, 21A, NL
|
INFINEON[Infineon Technologies AG]
|
| 521Y-481103A |
RF COAXIAL RELAY, SPDT, LATCHED, 0.21A (COIL), 24VDC (COIL), 5040mW (COIL), 40000MHz, 15W (RF INPUT), PANEL MOUNT
|
DOW-KEY MICROWAVE CORP
|
| APT5022AVR |
POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| R566363040 R566712008 R566712040 |
RF COAXIAL RELAY, DPDT, LATCHED, 0.21A (COIL), 28VDC (COIL), 5880mW (COIL), 4000MHz, PANEL MOUNT
RF COAXIAL RELAY, DPDT, FAILSAFE, 0.48A (COIL), 12VDC (COIL), 5760mW (COIL), 2000MHz, PANEL MOUNT
RF COAXIAL RELAY, DPDT, FAILSAFE, 0.48A (COIL), 12VDC (COIL), 5760mW (COIL), 4000MHz, PANEL MOUNT
|
RADIALL S A
|
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