| PART |
Description |
Maker |
| 8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 3N90ZL-TF1-T |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| CM900DUC-24NF |
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
|
Mitsubishi Electric Semicon...
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| MUR490E MUR4100E ON2740 MUR490E/D |
SWITCHMODE Ultrafast Power Rectifier 开关模式电源整流器超快
ULTRAFAST RECTIFIERS 4.0 AMPERES 900-1000 VOLTS
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs
|
IXYS, Corp.
ETC
IXYS Corporation
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| 2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
|
NEC
|
| QIS1790001 |
Single IGBT Module 900 Amperes/1700 Volts
|
Powerex Power Semicondu...
|
|
