| PART |
Description |
Maker |
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| ISL6615AFRZ ISL6615ACRZ-T ISL6615ACBZ ISL6615AIBZ |
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R 6 A AND GATE BASED MOSFET DRIVER, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| FDS4141 |
P-Channel PowerTrench? MOSFET -40V, -10.8A, 13.0mΩ
P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ
-40V P-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 10.8 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| FDMS86101 |
100V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 12.4 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
|
Fairchild Semiconductor, Corp.
|
| NTLJS4114NT1G |
Power MOSFET 30 V, 7.8 A, uCool Single N−Channel, 2x2 mm WDFN Package 3.6 A, 30 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| EDI8F32259C EDI8F32259C-MM EDI8F32259C-MN EDI8G322 |
256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块)
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
|
| IRF630BTSTUFP001 |
200V N-Channel B-FET / Substitute of IRF630 & IRF630A; ; No of Pins: 3; Container: Rail 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IXDD409CI IXDD409PI IXDD409SI IXDD409YI IXDN409CI |
9Amp low-side ultrafast MOSFET driver
Power Intergrated ICs
9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8
9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PSSO5
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| HUF75329D3 HUF75329D3S HUF75329D3ST HUF75329D3STNL |
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 20 A, 55 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| BUS-65118-B BUS-65113-883B BUS-65117-B BUS-65121-8 |
N-channel 25 V, 0.01 O, 40 A, DPAK, IPAK STripFET™ V Power MOSFET
N-channel 30V - 0.0075² - 70A - D²PAK low gate charge STripFET™ II Power MOSFET
N-CHANNEL 30V 0.038 Ohm 17A DPAK/IPAK STRIFET POWER MOSFET
MIL-STD-1553/ARINC Bus Controller/RTU
N-channel 60V - 0.0075² - 70A - D²PAK STripFET™ III Power MOSFET for DC-DC conversion
N-CHANNEL 24V - 0.010 Ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STRIPFET POWER MOSFET MIL-STD-1553/ARINC总线控制 RTU通讯
N-CHANNEL 30V - 0.0075 Ohm - 60A DPAK/IPAK STRIPFET III POWER MOSFET MIL-STD-1553/ARINC总线控制 RTU通讯
N-CHANNEL 40V - 3m Ohm 120A TO-220/I²PAK/D²PAK STRIPFET™MOSFET MIL-STD-1553/ARINC总线控制 RTU通讯
|
Coilcraft, Inc.
3M Company
|
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