| PART |
Description |
Maker |
| LC35W256EM LC35W256EM-10W LC35W256ET-10W LC35V256E |
256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CE
256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位）的SRAM控制引脚：OE和行政长
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位）的SRAM
128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC35256AM LC35256AT-10LV LC35256AT-12LV LC35256AT- |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
SANYO[Sanyo Semicon Device]
|
| LC35256A LC35256AS LC35256AT-10 LC35256AT-70 LC352 |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 L |
256 K (32768 words x 8 bits) SRAM 256度（32768字8位）的SRAM
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| EDD1216AATA-5C-E EDD1216AATA-5 EDD1216AATA-5B-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EDD2504AKTA-7B EDD2504AKTA-6B |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
| EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
| EDD1216AATA-7B-E EDD1216AATA EDD1216AATA-6B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
