| PART |
Description |
Maker |
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF990A |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Vishay Siliconix Philips Semiconductors
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|