| PART |
Description |
Maker |
| SPT5330 |
30 AMP HIGH SPEED PNP TRANSISTOR 150 VOLTS 30 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-61
|
NXP Semiconductors N.V.
SSDI[Solid States Devices, Inc]
|
| SFT1192_59 SFT1192-59 |
2 AMP 500 VOLTS PNP TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
| SFT5553A_G SFT5553A-G |
5 AMP 100 Volts PNP Power Transistor
|
SSDI[Solid States Devices, Inc]
|
| SFT5096G SFT5094_5 SFT5094-4 SFT5094G SFT5096_5 SF |
1 AMP, 500 Volts High Voltage PNP Transistor
|
SSDI[Solid States Devices, Inc]
|
| FJV4101RMTF |
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| FJV4103RMTF |
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| KSA812GAMTF |
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| MDS400 |
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 400; P(in) (W): 90; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHz Technology
|
| CR2-XXX CR2-005 CR2-010 CR2-020 CR2-040 CR2-060 CR |
Leaded Rectifier General Purpose
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 1200 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2安培整流0-1500伏轴向环氧案例枚CR2系列
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, SILICON, RECTIFIER DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
Bourns, Inc.
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
|
