| PART |
Description |
Maker |
| M67749SHR |
490-512MHz, 12.5V, 7W, FM PORTABLE RADIO 490 - 512MHz2.5V瓦，调频便携式收音机
490-512MHz / 12.5V / 7W / FM PORTABLE RADIO
RF POWER MODULE 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M57729SH 57729SH |
490-512MHz 12.5V /30W /FM MOBILE RADIO
490-512MHz 12.5V,30W,FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67749SH |
RF POWER MODULE 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| NTE361 |
Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz
|
NTE[NTE Electronics]
|
| M68762SH |
RF POWER MODULE 470-512MHz, 12.5V, 30W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| C391PS C391PC C391PD C391PE C391PM C391PN |
ECONOLINE: RTS & RTD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%
Phase Control SCR 490 Amperes Avg 1300-1800 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| LFE3-95EA-6FN672C LFE3-95EA-8FN672C LFE3-150EA-7FN |
FPGA, 375 MHz, PBGA672 27 X 27 MM, LEAD FREE, FPBGA-672
FPGA, 500 MHz, PBGA672 27 X 27 MM, LEAD FREE, FPBGA-672
FPGA, 420 MHz, PBGA672 27 X 27 MM, LEAD FREE, FPBGA-672
Field Programmable Gate Arrays - FPGAs 92K LUTs, 490 I/O 7 Speed FPGA, 420 MHz, PBGA1156
Field Programmable Gate Arrays - FPGAs 66.5K LUTs, 490 I/O 8 Speed FPGA, 500 MHz, PBGA1156
FPGA, 500 MHz, PBGA484 23 X 23 MM, LEAD FREE, FPBGA-484
FPGA, 375 MHz, PBGA1156
FPGA, PBGA256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| SIOV-LS40K130QP SIOV-LS40K230QP SIOV-LS40K320QP SI |
RESISTOR, VOLTAGE DEPENDENT, 170 V, 310 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 300 V, 460 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 420 V, 640 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 560 V, 910 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 585 V, 950 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 200 V, 360 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 320 V, 490 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 350 V, 550 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 505 V, 800 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 615 V, 960 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 745 V, 960 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 895 V, 1100 J, CHASSIS MOUNT
RESISTOR, VOLTAGE DEPENDENT, 1060 V, 1200 J, CHASSIS MOUNT
|
SIEMENS AG
|
| TM15080N5E TM05300N2 TM03501N9D TM20200N9 TM20200N |
3 ELEMENT, 14 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 45 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 780 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
3 ELEMENT, 39 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
2 ELEMENT, 75 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 490 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR
|
UNITED CHEMI-CON INC
|
|
