| PART |
Description |
Maker |
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| APT5020BLC APT5020SLC |
POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FRK9150H FRK9150R FRK9150D FN3266 |
26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| STY30NK90Z |
N-CHANNEL 900V - 0.25 OHM - 26A MAX247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
N-CHANNEL 900V - 0.21ohm - 26A Max247 Zener-Protected SuperMESH MOSFET
|
ST Microelectronics
|
| 2SK3820 |
N-Channel Power MOSFET 100V 26A 60m Ohm TO-263-2L
|
ON Semiconductor
|
| M57788HR |
MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO
450-470MHz / 13.5V / 47W / FM MOBILE RADIO
450-470MHz, 13.5V, 47W, FM MOBILE RADIO 45070MHz3.5V7W配合，调频移动通信
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
