| PART |
Description |
Maker |
| 200F 209S12FA |
LOW COST, HIGH POWER DENSITY 24 PIN DIP COMPATIBLE, 2.25W LAN DC/DC CONVERTERS
|
Make-Ps
|
| QL3004 |
pASIC 3 FPGA Family High Performance and High Density with Low Cost and Complete Flexibiltiy(具有低成本和充分灵活性的高性能和高密度的pASIC 3现场可编程门阵列)
|
QuickLogic Corp.
|
| 5962-9458501HYC 5962-9458501HYA 5962-9458502HNC 59 |
Single/Dual/Quad, Low-Cost, UCSP/SOT23, Low-Power, Rail-to-Rail I/O Op Amps
x32 EEPROM Module
Current-Regulating Hot-Swap Controller with DualSpeed/BiLevel Fault Protection
Single/Dual/Quad, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps with Shutdown
16 x 16 Nonblocking Video Crosspoint Switch with On-Screen Display Insertion and I/O Buffers
ADSL Drivers/Receivers for Customer Premise Equipment
Low-Cost, UCSP/SOT23, Micropower, High-Side Current-Sense Amplifier with Voltage Output
Low-Cost, 3V/ 5V, 620µA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs
1.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown X32号的EEPROM模块
High-Speed, Low-Power, Single-Supply Multichannel, Video Multiplexer-Amplifiers X32号的EEPROM模块
|
Brady, Corp.
Chicago Miniature Lighting, LLC
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| MAX5380 MAX5380EUK-T MAX5380LEUK MAX5380-MAX5382 M |
4 V, Low-cost, low-power, 8-bit DAC with 2-wire serial interface
Low-Cost, Low-Power, 8-Bit DACs with 2-Wire Serial Interface in SOT23 SERIAL INPUT LOADING, 20 us SETTLING TIME, 8-BIT DAC, PDSO5
Low-Cost, Low-Power, 8-Bit DACs with 2-Wire Serial Interface in SOT23 低成本，低功耗，8位DAC2线串行接口，采用SOT23
Low-Cost Low-Power 8-Bit DACs with 2-Wire Serial Interface in SOT23
" Low-Cost, Low- Power, 8-Bit DACs with 2-Wire Serial Interface in SOT23"
Low-Cost / Low-Power / 8-Bit DACs with 2-Wire Serial Interface in SOT23
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| AD8129 AD8130 AD8129ARM-REEL72 AD8130ARM-REEL72 AD |
Low-Cost 200MHz Differential Receiver Amplifier
IC,DIFFERENTIAL AMPLIFIER,SINGLE,SOP,8PIN,PLASTIC
From old datasheet system
Low-Cost High-Speed Differential Receiver and Driver
Low-Cost 270 MHz Differential Receiver Amplifiers 低成70 MHz的差分接收器放大
Low-Cost 270 MHz Differential Receiver Amplifiers SPECIALTY ANALOG CIRCUIT, PDSO8
|
AD[Analog Devices]
adi
Analog Devices, Inc.
|
| SD18-100 SD18-101 SD10-1R0 SD10-1R5 SD52-6R8 SD10- |
High Power Density, Low Profile, Shielded Inductors
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SD52-150-R SD52-151-R SD52-100-R SD52-101-R SD52-1 |
High Power Density, Low Profile, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| MAX698-MAX699 MAX699 MAX699CPA MAX699CWE MAX699EPA |
4-Wide AND-OR-invert Gates 14-CDIP -55 to 125
Low Cost Power-On Reset and Watchdog Controllers
Low-Cost Power On Reset IC
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
Maixm
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| HM53-20580-LF HM53-000R8VLF HM53-001R6-LF HM53-001 |
High Power Low Cost Inductors
|
TT Electronics.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
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