| PART |
Description |
Maker |
| VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
| VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 2ED300C17-ST |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
|
Infineon Technologies AG
|
| SEMIX553GAR128D SEMIX553GAL128D |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX303GB12E4S |
Trench IGBT Modules
466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX703GB126HD SEMIX703GB126HD07 |
Trench IGBT Modules 700 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MDI100-12A3 MII100-12A3 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS Corporation
ETC[ETC]
|
