| PART |
Description |
Maker |
| W9825G2JB |
2M X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| W9812G2IB |
1M × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| W9812G2GB-6 W9812G2GB-6I W9812G2GB-75 W9812G2GB |
1M 】 4 BANKS 】 32BITS SDRAM
|
Winbond
|
| W9864G2JH |
512K ?4 BANKS ?32BITS SDRAM
|
http://
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| W986408CH-8H W986408CH-75 W986408CH |
2M x 8BIT x 4 BANKS SDRAM
x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| W946432AD W946432A |
SDRAM 2Mx32
512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS46LR32200B |
512K x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
