| PART |
Description |
Maker |
| MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC47V5864 |
5.8 - 6.4 GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V3742A |
3.7-4.2 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA
Q-band Power Amplifier
17 - 43 GHz MPA/Multiplier
Ka-Band Power Amplifier
27 - 31 GHz 2W Balanced Power Amplifier
K Band LNA
Ka Band HPA
PTC Resettable Fuses
|
Bourns Inc.
Bourns Electronic Solutions
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
