| PART |
Description |
Maker |
| SSI32R2020R-4CL SSI32R2020R-4CV SSI32R2020R-6CV SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
10-Channel Disk Read/Write Circuit 10通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
DB Lectro, Inc.
Lattice Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| CS-514-4DW24 CS-514-2DW18 CS-514-6DW28 CS-514-6FN2 |
4-Channel Disk/Tape Read/Write Circuit
6通道写电
4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
6-Channel Read/Write Circuit
|
Glenair, Inc.
|
| BH6629BFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| SSI32R501-8F SSI32R501R-6CL SSI32R501-6F |
8-Channel Disk Read/Write Circuit
6-Channel Read/Write Circuit 6通道写电
|
Sumida, Corp.
|
| CXA3092N |
4ch. Read/Write Amplifier for Thin Film Head of
4ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive
From old datasheet system
|
SONY[Sony Corporation]
|
| CXA3090N |
6ch. Read/Write Amplifier for Thin Film Head of
6ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive
|
SONY[Sony Corporation]
|
| AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī
2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| HA166008 HA166008MP HA166009MP HA166010MP |
READ/ WRITE CIRCUIT
|
Hitachi,Ltd.
Hitachi Semiconductor
|
