| PART |
Description |
Maker |
| 2SK30ATM |
Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Tiger Electronic Co.,Lt...
|
| 2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BA3420 BA3420AL A5800764 |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
From old datasheet system
Dual recording / playback preamplifier for radio cassette recorders
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| EN8278B CPH5901F-TL-E CPH590112 CPH5901G-TL-E CPH5 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| S1724BBBA S1724BDBA S1724CBBA S1724CDBA S1724DDBA |
Optical amplifier platform, erbium-doped fiber amplifier. P0=16.0 dBm. Connector FC/PC. Without heat sink.
Optical Amplifier Platform1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform/1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(S and V Series) 光放大器平台,1724 -型Eribium铒光纤放大器（S和V系列
BOARD INTERFACE KGZ/GMS 0-25%
Optical amplifier platform, erbium-doped fiber amplifier. P0=13.0 dBm. Connector FC/PC. Without heat sink.
|
AGERE[Agere Systems]
ERICSSON
Austin Semiconductor, Inc
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
