| PART |
Description |
Maker |
| CY3207ISSP |
ISSP User Guide(ISSP用户指南)
|
Cypress Semiconductor Corp.
|
| CY3207ISSP |
In-System Serial Programming (ISSP) Guide
|
Cypress Semiconductor
|
| UPC1676G |
silicon monolithic integrated circuit employing small package
|
TY Semiconductor Co., Ltd
|
| UPD65530 UPD65531 UPD65345S1-XXX-6C UPD65349S1-XXX |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
|
NEC
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| AD7008 AD7008PCB AD7008/PCB AD7008AP20 |
M83723 14C 14#16 SKT PLUG
M83723 3C 3#20 PIN PLUG
CMOS DDS Modulator
Numerically Controlled Oscillator Employing a 32-Bit Phase Accumulator, Sine and Cosine Look-Up Tables and a 10-Bit DAC, CMOS
|
Analog Devices, Inc.
|
| IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process Technology
|
IRF[International Rectifier]
|
| RN4601 |
Transistor PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
Toshiba Semiconductor
|
| RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN1903 RN1906 RN1901 RN1902 RN1904 RN1905 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
LED 5X5MM SQR RED DIFF PANEL MT 东芝npn型晶体管硅外延型（厘进程
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| RN4907 |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
