| PART |
Description |
Maker |
| LC5768VG-10F484I LC5768VG-10F256I LC5768VG-10F256C |
EE PLD, 12 ns, PBGA484 FBGA-484
EE PLD, 12 ns, PBGA256 FBGA-256
EE PLD, 10 ns, PBGA676 FBGA-676
EE PLD, 10 ns, PBGA484 FBGA-484
EE PLD, 10 ns, PBGA256 FBGA-256
EE PLD, 5 ns, PBGA256 FBGA-256
EE PLD, 5 ns, PBGA484 FBGA-484
EE PLD, 7.5 ns, PBGA484 FBGA-484
EE PLD, 7.5 ns, PBGA256 FBGA-256
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EP2C50F672C8N EP2C35F484I8 EP2C8T144C8N EP2SGX130G |
FPGA, 3158 CLBS, 402.5 MHz, PBGA672 LEAD FREE, FBGA-672
FPGA, 2076 CLBS, 402.5 MHz, PBGA484 FBGA-484
Cyclone II Device Handbook, Volume 1
FPGA, 288 CLBS, 450 MHz, PQFP144
|
Altera, Corp.
Altera International Limited
Altera Corporation
|
| CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
| HY27SS08121M-FCP HY27SS08121M-FPCP |
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
|
Hynix Semiconductor, Inc.
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| K8S1315EBC-DC1C0 K8S1315EBC-SC1C0 K8S1315EBC-DC1E0 |
32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64
|
KOA Speer Electronics,Inc.
|
| ST303C04CFL0 ST303C04CFN0 ST303C08CFL0 ST303C08CFN |
Silicon Controlled Rectifier, 1180 A, 1000 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
MAX II CPLD 1270 LE 256-FBGA 400V 1180A逆变晶闸管采用TO - 200AB（电子北辰）封装
Cyclone II FPGA 35K FBGA-672 800V180A逆变晶闸管采用TO - 200AB（电子北辰）封装
400V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
1000V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
|
Vishay Semiconductors
TE Connectivity, Ltd.
International Rectifier
|
| MCF5272 |
Users Guide
|
Motorola
|
|
