| PART |
Description |
Maker |
| TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F |
WORD-WIDE FlashFile MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| E28F004SC-85 28F008SC 28F016SC G28F008SC-150 G28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
8-MBIT SmartVoltage FlashFile Memory(8M位智能电压闪速存储器)
16-MBIT SmartVoltage FlashFile Memory(16M位智能电压闪速存储器)
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 85 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 字节宽SmartVoltage FlashFile Memory系列486兆比
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 120 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 100 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 2M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| E28F004S3-120 E28F004S3-150 PA28F008S3-150 TB28F00 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 120 ns, PDSO40
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 150 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system
262214-Word x 8-Bit Field Memory
262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
|
