| PART |
Description |
Maker |
| GM71V16163BT-6 GM71V16163BJ-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
AMIC Technology, Corp.
|
| GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
| UPD421175G5-35-7JF UPD421175G5-25-7JF UPD421175LE- |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
| HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| UPD424260V-80 UPD424260V-70 UPD42S4260G5-70-7JF UP |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| HM51W16160AJ-6 HM51W16160ALTT-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
E-Z Hook,A Div. of Tektest, Inc.
|
| UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
| MX26F128J3XCC-15 MX26F128J3XCC-12 MX26F128J3TC-12 |
Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY 旺宏NBit商标家庭128M的内存[x8/x16]V页模式eLiteFlash商标记忆
|
Electronic Theatre Controls, Inc.
|
| UPD424263LLE-A80 UPD424263LLE-A70 UPD424263LG5M-A6 |
20-output, 200-MHz Zero Delay Buffer
16 Kbit (2K x 8) nvSRAM
3.3V Zero Delay Buffer
x16 Fast Page Mode DRAM
Three-PLL General-Purpose EPROM Programmable Clock Generator
Phase-Aligned Clock Multiplier x16快速页面模式的DRAM
|
Cooper Hand Tools
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
