| PART |
Description |
Maker |
| CY14B101Q110 CY14B101Q2-LHXIT |
1 Mbit (128K x 8) Serial SPI nvSRAM
|
http://
Cypress Semiconductor
|
| CY14B101K-SP35XC CY14B101K-SP35XI CY14B101K-SP35XI |
1 Mbit (128K x 8) nvSRAM With Real Time Clock
|
Cypress Semiconductor
|
| CY14B101K-SP35XCT CY14B101K-SP25XCT CY14B101K-SP45 |
1 Mbit (128K x 8) nvSRAM With Real Time Clock
|
Cypress Semiconductor
|
| CY14B101L-SZ35XC |
1 Mbit (128K x 8) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SOIC
|
CYPRESS SEMICONDUCTOR CORP
|
| CY14B104M-ZSP20XCT CY14B104K-ZS25XI CY14B104M-ZSP2 |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock
4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| CY14V101LA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY14B104L CY14B104L-BV45XCT CY14B104L-BV45XI CY14B |
4-Mbit (512K x 8/256K x 16) nvSRAM
|
http://
Cypress Semiconductor
|
