| PART |
Description |
Maker |
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| N01L1618N1AT2-70I N01L1618N1A N01L1618N1AB N01L161 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM
12ns 128K x 8 1Mb asynchronous SRAM
10ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology]
GSI Technology, Inc.
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| 24AA02-I/OT 24LC02B-I/MS 24LC02B-E/P 24LC02B-I/ST |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC
SERIAL EEPROM|256X8|CMOS|TSOP|6PIN|PLASTIC
3.3V Single-Piece 1Mb Nonvolatile SRAM
3.3V Single-Piece 256Kb Nonvolatile SRAM
Single/Dual/Triple/Quad DS3/E3 Single-Chip Transceivers
Single/Dual/Triple/Quad ATM/Packet PHYs for DS3/E3/STS-1 串行EEPROM的| 256X8 |的CMOS |双酯| 8引脚|塑料
Single-Piece 1Mb Nonvolatile SRAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
2k x 8 3V/5V Operation Static RAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
Single/Dual/Triple/Quad ATM/Packet PHYs with Built-In LIU 串行EEPROM的| 256X8 |的CMOS |专科| 8引脚|塑料
|
Microchip Technology, Inc.
|
| HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
|
| HY628100BLLG-70 |
IC-SMD-SRAM 1MB 集成电路贴片静态存储器1MB
|
Hynix Semiconductor, Inc.
|
| DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| A0A16 |
Low Power Slow SRAM - 1Mb
|
Hynix Semiconductor
|
