| PART |
Description |
Maker |
| GBAV70 |
consists of two diodes
|
GTM
|
| AP1511 |
AP1511 consists of step-down switching regulator
From old datasheet system
|
Anachip Corporation
|
| 1MC10-071-10 1MC10-071-15 1MC10-071-20 1MC10071 |
Thermoelectric Module
The MC10 is powered sub-series of large MC series of TE micro-modules. It consists of the following TEC types
|
RMT Ltd.
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| L3936 L3936A L3926A L3926AD L3926AN L3916A1 L3916A |
SPEECH AND 14 MEMORY DIALER WITH LED DRIVER
The device consists of the speech and the dialer
|
STMicroelectronics
N.A.
|
| MA2C196 MA196 |
Small-signal device - Diodes - Swicthing Diodes
Switching Diodes
DO-34-A1
From old datasheet system
Silicon epitaxial planar type
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| CZRQR2V7B CZRQR4V7B CZRQR20VB CZRQR10VB CZRQR9V1B |
Zener Diodes, P-D=0.125Watts, V-Z=2.7V
Zener Diodes, P-D=0.125Watts, V-Z=4.7V
Zener Diodes, P-D=0.125Watts, V-Z=20V
Zener Diodes, P-D=0.125Watts, V-Z=10V
Zener Diodes, P-D=0.125Watts, V-Z=9.1V
Zener Diodes, P-D=0.125Watts, V-Z=7.5V
Zener Diodes, P-D=0.125Watts, V-Z=5.1V
Zener Diodes, P-D=0.125Watts, V-Z=8.2V
Zener Diodes, P-D=0.125Watts, V-Z=27V
Zener Diodes, P-D=0.125Watts, V-Z=3V
Zener Diodes, P-D=0.125Watts, V-Z=22V
Zener Diodes, P-D=0.125Watts, V-Z=24V
Zener Diodes, P-D=0.125Watts, V-Z=2.4V
|
Comchip Technology
|
| DAN235U DAN235E |
Diodes > High Frequency Diodes > Band switching diodes
|
ROHM
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| RN142S |
Diodes > High Frequency Diodes > PIN diodes
|
ROHM
|
| RN731V |
Diodes > High Frequency Diodes > PIN diodes
|
Rohm
|
