| PART |
Description |
Maker |
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
| ML776H10 ML7XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML785B12 ML7XX12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML99213 ML9XX13 |
InGaAsP-MQW-DFP LASER DIODES
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5522 NX5522EH NX5522EK |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
