| PART |
Description |
Maker |
| M27C32206 M27C322 M27C322-80F3 M27C322-80F1 M27C32 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27C322-100F1 M27C322-100S1 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M29KDCL3-32T M29KW032E110N1T M29KW032E110N3T M29KW |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlashMemory 32兆位Mb x16插槽，统一V电源LightFlash⑩记
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash?/a> Memory
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
意法半导
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M58LW032A90ZA6T M58LW032A90ZA1T M58LW032A90N6T M58 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory 32兆位Mb x16插槽，统一座，突发3V电源快闪记忆
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M36W432-ZAT M36W432BZA M36W432T85ZA1T M36W432T85ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320CT M28W320CT100GB1T M28W320CT100GB6T M28W32 |
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27V160 M27V160-100B1TR M27V160-100B6TR M27V160-10 |
CAP .47UF 250/275VAC ECQ-UL 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
|
STMicroelectronics N.V.
ST Microelectronics
|
