| PART |
Description |
Maker |
| TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| SSM3K324R |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6N04FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6L09FU |
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8105-H |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM3J133TU-14 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPCS8204 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
