| PART |
Description |
Maker |
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| IRL3803L IRL3803S |
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）\u003d 0.006ohm，身份证\u003d律目140A?）
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?)
POWER MOSFET(VDSS=30V, RDS(ON)=0.006OHM, ID=140Aㄌ)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRC830 |
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFP2907 IRFP2907PBF |
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?)
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A)
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
IRF[International Rectifier]
|
| IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A)
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
| IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
|
International Rectifier, Corp.
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
