| PART |
Description |
Maker |
| SST29VE020-200-4I-EH SST29VE020-200-4C-NH SST29LE0 |
4 Mbit (512K x 8/256K x 16) nvSRAM
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1 Mbit (128K x 8) nvSRAM With Real Time Clock
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller EEPROM的| 256KX8 |的CMOS |双酯| 32脚|塑料
EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC EEPROM的| 256KX8 |的CMOS | LDCC | 32脚|塑料
EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC EEPROM的| 256KX8 |的CMOS | TSSOP封装| 32脚|塑料
|
Silicon Storage Technology, Inc.
Cypress Semiconductor, Corp.
|
| MX27L2000T2I-25 MX27L2000T2I-20 MX27L2000T3I-15 MX |
XO 33.3333MHZ 50PPM 3.3V SMD-7050 TR-7-PL
CAP 10UF 25V 10% TANT RAD.10 TR-14
LT Series Water Resistant Linear Position Transducer, 50,8 mm [2.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000202
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 120 ns, PDSO32
OSCILLATOR 24.576MHZ SMD 256K X 8 OTPROM, 150 ns, PDSO32
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 200 ns, PDSO32
|
Macronix International Co., Ltd.
|
| MX29F200CBMI-70G MX29F200CBMI-90 MX29F200CBTI-70G |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| BS62LV2007 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2000 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| TC528257J-70 |
VRAM,FAST PAGE,256KX8,CMOS,SOJ,40PIN,PLASTIC
From old datasheet system
|
Toshiba.
|
| K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
| KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX29F200BTI-90 MX29F200BMC-55 MX29F200BMI-70 MX29F |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
Fully Differential I/O Audio Amplifier 8-SOIC -40 to 85
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
|
| 2N5547JANTX 2N5545JANTX 2N5545JANTXV 2N5546JANTX 2 |
Monolithic MilitaryGeneral Purpose
Monolithic N-Channel JFET Duals
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| 3D7304 3D7304-25 3D7304-100 3D7304-15 3D7304-20 3D |
MONOLITHIC QUADRUPLE FIXED DELAY LINE
Delay 25 /-1 ns, monolithic quadruple fixed delay line
Delay 100 /-2 ns, monolithic quadruple fixed delay line
Delay 10 /-1 ns, monolithic quadruple fixed delay line
Delay 15 /-1 ns, monolithic quadruple fixed delay line
Delay 20 /-1 ns, monolithic quadruple fixed delay line
Delay 200 /-4 ns, monolithic quadruple fixed delay line
Delay 30 /-1 ns, monolithic quadruple fixed delay line
Delay 300 /-6 ns, monolithic quadruple fixed delay line
Delay 40 /-1 ns, monolithic quadruple fixed delay line
Delay 400 /-8 ns, monolithic quadruple fixed delay line
Delay 50 /-1 ns, monolithic quadruple fixed delay line
Delay 500 /-10 ns, monolithic quadruple fixed delay line
|
Data Delay Devices Inc
|
