| PART |
Description |
Maker |
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode 798 nm, LASER DIODE M-272, 12 PIN
|
SONY NXP Semiconductors N.V.
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| DL-3038-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| OL3204N-40 OL3201N-40 |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1280-1330nm, THROUGH HOLE MOUNT, FC CONNECTOR 1.3 レm High-Power Laser-Diode DIP Module 1.3レ米高功率激光二极管双酯模块 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 1.3レ米高功率激光二极管双酯模块 1.3 μm High-Power Laser-Diode DIP Module 1.3 m High-Power Laser-Diode DIP Module
|
LAPIS SEMICONDUCTOR CO LTD OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|