| PART |
Description |
Maker |
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| ICE2A165 ICE2A365 |
Integrated Power ICs - max. Pout=18W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=100kHz, Vbreak=650V, DIP8
|
Infineon
|
| SDIP-38L |
IGBT intelligent power module (IPM) 14 A, 600 V, DBC isolated SDIP-38L molded
|
STMicroelectronics
|
| STGIPS14K60 |
IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
|
STMicroelectronics
|
| STGIPS20K60 |
IGBT intelligent power module (IPM) 17 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM6472-4UL09 |
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM3438-12UL |
HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
