| PART |
Description |
Maker |
| LTC1262-15 |
12V, 30mA Flash Memory Programming Supply
|
Linear Technology
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32 512K-Bit CMOS Flash Memory Bulk Erase Flash Memory, 512Kb 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http:// CATALYST[Catalyst Semiconductor]
|
| CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
| P89C535NBAA P89C536NBAA P89C536NBBB P89C538NBAA P8 |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
|
NXP Semiconductors N.V.
|
| SX52BD SX48BD/TQ SX52BD/PQ SX48BD |
Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability, and On-Chip Debug
|
UBICOM Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
| SX48BD SX52BD_PQ SX52BD SX48BD_TQ |
Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability, and On-Chip Debug
|
N.A. ETC[ETC]
|
| SX28AC SX20AC100-I_DP SX20AC100-I_PQ SX20AC100-I_S |
Configurable Communications Controllers with EE/Flash Program Memory In-System Programming Capability and On-Chip Debug Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability and On-Chip Debug
|
ETC[ETC]
|
| E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% Series 320 tactile switch with multiple color and cap options FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation Intel Corp. Rochester Electronics, LLC Intel, Corp. Sharp, Corp.
|
| ATMEGA8535 ATMEGA8535L |
8-Kbyte self-programming Flash Program Memory, 544 Byte SRAM, 512 Byte EEPROM, 8-channel 10-bit A/D Converter. Up to 16 MIPS throughput at 16 MHz. 8-Kbyte self-programming Flash Program Memory, 544 Byte SRAM, 512 Byte EEPROM, 8-channel 10-bit A/D Converter. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation
|
Atmel
|
| ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz. 8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|