| PART |
Description |
Maker |
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| ANT10-M24LR16E |
Antenna reference board for M24LR16E-R with ESD protection, NOT FOR SALE
|
ST Microelectronics
|
| AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090 |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
DIE SALE, 2.7V, 7 MIL(BIOS FLASH)
10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH)
8-SOIC,AUTO TEMP,2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE)
10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE)
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|
Stackpole Electronics, Inc.
Ecliptek, Corp.
Analog Devices, Inc.
Glenair, Inc.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| SIDC02D60SIC2SAWN SIDC02D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 6A die sawn
Diodes - HV Chips - 600V, 6A die unsawn
|
Infineon
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| ANT2-M24LR16E |
20 mm x 40 mm antenna reference board for M24LR16E-R, NOT FOR SALE
20 mm x 40 mm antenna reference board for the M24LR16E-R Dual Interface EEPROM
|
ST Microelectronics
STMicroelectronics
|
| ANT1-M24LR16E |
45 mm x 75 mm antenna reference board for M24LR16E-R, NOT FOR SALE
45 mm x 75 mm antenna reference board for the M24LR16E-R Dual Interface EEPROM
|
ST Microelectronics
STMicroelectronics
|
| M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V.
http://
ST Microelectronics
|
| IXTD8P50-5B IXTD16P20-5B IXTD36P10-5B |
500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
200 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 0.259 X 0.259 INCH, DIE
|
IXYS, Corp.
|
| 11-40-2102 T8305AX 1140-2102 0011-40-2102 |
Terminator Die
|
Molex Electronics Ltd.
|
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