Part Number Hot Search : 
AM29861 E80CC1 XB0291A DAC10FX SEMIX 27C51 MIHW1037 KBPC252
Product Description
Full Text Search

MRF6S19100HR308 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF6S19100HR308_473878.PDF Datasheet


 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
 Product Description search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET


 Related Part Number
PART Description Maker
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
RFK35N10 RFK35N08 POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
PTF10020 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
ERICSSON POWER MODULES AB
Ericsson Microelectronics
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
MAPLST1617-030CF RF Power Field Effect Transistor
Tyco Electronics
9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT50 RF Power Field Effect Transistor
Freescale Semiconductor, Inc
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MTM15N20 MOTOROLAINC-MTM15N20 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
 
 Related keyword From Full Text Search System
MRF6S19100HR308 server MRF6S19100HR308 positive MRF6S19100HR308 ram MRF6S19100HR308 voltage vgs MRF6S19100HR308 datasheet
MRF6S19100HR308 Micropower MRF6S19100HR308 watt MRF6S19100HR308 maker MRF6S19100HR308 nec MRF6S19100HR308 Differential
 

 

Price & Availability of MRF6S19100HR308

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.043210029602051