| PART |
Description |
Maker |
| SD1996-14-5 |
PLUG, ANGLE, TRB, (3 SLOT)
|
Winchester Electronics Corporation
|
| MBM29LV001BC-70 MBM29LV001BC-55 MBM29LV001TC-55PD |
1M (128K x 8) BIT 100万（128K的8）位
ETHERNET TO TOKEN RING ADAPTER TCP/IP TRB US 100万（128K的8）位
GLAND PACK 3 TO 5MM
|
Fujitsu, Ltd.
PROM
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| 50L-018 |
FEEDTHRU TERMINATION
|
JFW Industries, Inc.
|
| XXX-130-XX-XX-XX |
TABULATED OUTLINE, WRD W/G BULKHEAD FEEDTHRU
|
Advanced Technical Materials Inc.
|
| DCP-USBAB-USBB |
PC Header, Solder Cup, and Feedthru options available
|
List of Unclassifed Man...
|
| CMHZ4099 CMHZ4107 CMHZ4100 CMHZ4101 CMHZ4102 CMHZ4 |
LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW/ 5% TOLERANCE
LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE
CAP-ARRAY 0.1UF 16V 10% X7R 4-ELEMENT SMD-0612 SN100 TR-7-PL
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:C0G/NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes; Features:Feedthru
CAP 1000PF 50V 50-20% X7R SMD-1206 SN100 TR-7-PL FEED-THRU
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Features:Feedthru; Leaded Process Compatible:Yes
CAP 0.022UF 50V 50-20% X7R SMD-1206 SN100 TR-7-PL FEED-THRU
Ceramic Multilayer Capacitor; Capacitance:4700pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Features:Feedthru; Leaded Process Compatible:Yes
surface mount silicon Zener diodes 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
