| PART |
Description |
Maker |
| 7C420-65 7C433-65 7C425-20 7C425-65 7C425-40 7C425 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 256/512/1K/2K/4K × 9异步FIFO
256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 65 ns, PQCC32
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT72V3634L10PF IDT72V3634L15PF8 |
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
512 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| AT93C56AY1-10YU-1.8 AT93C56AY6-10YH-1.8 AT93C56A-1 |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| AT93C56AU3-10UU-1.8 AT93C56AD3-10DH-1.8 AT93C56AW- |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| CY7C4231-15JXC CY7C4231-15AXC |
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs 2K X 9 OTHER FIFO, 10 ns, PQCC32
64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs 2K X 9 OTHER FIFO, 10 ns, PQFP32
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| STM32F103RET6 STM32F103ZET6 STM32F103ZEH7 STM32F10 |
256 to 512 Kbytes of Flash memory
High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
|
STMicroelectronics
|
| IDT72V845L20PFI IDT72V845L20PF IDT72V845L15PFI IDT |
4K x 18 DualSync FIFO, 3.3V
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18
From old datasheet system
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18 DUAL 512 x 18 DUAL 1024 x 18 DUAL 2048 x 18
2K x 18 DualSync FIFO, 3.3V
256 x 18 DualSync FIFO, 3.3V
|
IDT[Integrated Device Technology]
|
| IDT72805LB10BGI IDT72845LB20PFI IDT72835LB20PFI ID |
4K x 18 DualSync FIFO, 5.0V
2K x 18 DualSync FIFO, 5.0V
1K x 18 DualSync FIFO, 5.0V
256 x 18 DualSync FIFO, 5.0V
512 x 18 DualSync FIFO, 5.0V
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 512 X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 2K X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 1K X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 512 X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 2K X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 CMOS双SyncFIFO56 × 18，双512 × 18，双1,024 × 18，双2,048 × 18，双4,096 × 18
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
|
Integrated Device Technolog...
IDT
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| AM29LV400B100WACB AM29LV400B150WACB AM29LV400B90RW |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 150ns
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 90ns
|
Advanced Micro Devices
|
| CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
|
