| PART |
Description |
Maker |
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| MX23C8111PC-95 MX23C8111PC-12 |
ROM|512KX16/1MX8|CMOS|DIP|42PIN|PLASTIC 光盘| 512KX16/1MX8 |的CMOS |双酯| 42PIN |塑料
|
Macronix International Co., Ltd.
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43R16800A-6TL IS43R16800A-6T IS43R16800A-6 |
8Meg x 16 128-MBIT DDR SDRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| MBM29LV800BA-12PBT |
IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,BGA,48PIN
|
Fujitsu
|
| IS61LV5121 |
512Kx16 High Speed Asynchronous CMOS Static RAM With 3.3V Supply
|
ISSI
|
| LH28F800BGHE |
IC,EEPROM,NOR FLASH,512KX16,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
sharp
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
