| PART |
Description |
Maker |
| PH3134-10M |
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| SMTR2425-11B40 |
2.4-2.5 GHz 10W Bi-Directional Power Amplifier
|
Stealth Microwave, Inc.
|
| MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MA08509D |
10W Power Amplifier Die Preliminary Release 8.0-11 GHz
|
MACOM[Tyco Electronics]
|
| MGFC40V4450A C404450A |
From old datasheet system
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
