| PART |
Description |
Maker |
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| MSM855B MSM855B2 MSM855 |
Intel垄莽 Pentium垄莽 M CPU 0.6 / 1.0 / 1.4 / 1.8GHz
Intel? Pentium? M CPU 0.6 / 1.0 / 1.4 / 1.8GHz
|
Advanced Digital Logic, Inc.
|
| 159-ARCE-X-X-X |
OUTLINE, WR159 ARC DETEC 90 3-BEND
|
Advanced Technical Materials Inc.
|
| 187-ARCE-X-X-X |
OUTLINE, WR187 ARC DETEC. 90 E-BEND
|
Advanced Technical Materials Inc.
|
| FMC7G50US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SZA-3044 SZA-3044Z |
2.7-3.8GHz 5V 1W Power Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
| CHA5215AFKF_23 CHA5215A CHA5215A99F_00 CHA5215AFKF |
5.8GHz Medium Power Amplifier 5.8GHz的中等功率放大器
|
United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
|
| TIM3438-12UL |
HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz
|
Toshiba Semiconductor
|
| D10040270GT |
GaAs Power Doubler Hybrid 40MHz to 1000MHz
|
RF Micro Devices
|
| D10040180GTH |
GaAs Power Doubler Hybrid 40MHz to 1000MHz
|
RF Micro Devices
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
