| PART |
Description |
Maker |
| GN4L4Z GN4A3Q GN4A4L GN4A4M GN4A4P GN4A4Z GN4F3M G |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
| FN4A3Q FN4L4K |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
B Series/ Male Solder
|
NEC Corp.
|
| FN1F4N FN1F4N-L FN1F4N-T1B FN1F4N-T2B |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor
|
NEC Corp.
|
| FN1F4Z FN1F4Z-L FN1F4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
|
NEC
|
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN49A1 |
Transistor Silicon PNP NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
TOSHIBA Transistor Silicon PNP ・ NPN Epitaxial Type
|
Toshiba Semiconductor
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| FN1L3N FN1L3N-T1B FN1L3N-T2B FN1L3N-L |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor
|
NEC[NEC]
|
| RN2710JE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2906FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN4988FE |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN4984FE |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
