| PART |
Description |
Maker |
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 4AM15NCH/PCH |
FET Arrays
|
Hitachi Semiconductor
|
| 4AM13NCH/PCH |
FET Arrays
|
Hitachi Semiconductor
|
| SLA5096 |
Transistor and MOS FET Arrays
|
Sanken electric
|
| PLS153 PLS153A PLS153AA PLS153AN PLS153N |
Programmable logic arrays 18 42 10 OT PLD, 30 ns, PDIP20
Programmable logic arrays 18 42 10 OT PLD, 30 ns, PQCC20
Programmable logic arrays 18 42 10 可编程逻辑阵列18420
Programmable logic arrays 18 × 42 × 10
Programmable logic arrays 18 42 10
Programmable logic arrays 18 】 42 】 10
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MC1413 MC1413BP MC1413P MC1416BP MC1416P MC1413B M |
PERIPHERAL DRIVER ARRAYS
High Voltage High Current Darlington Transistor Arrays
|
ON Semiconductor
|
| PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode)
Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
| ULN2803 ULN2804 ON3008 ULN2804A ULN2803A ULN2803/D |
Octal High Voltage, High Current Darlington Transistor Arrays
From old datasheet system
OCTAL PERIPHERAL DRIVER ARRAYS 八路周边驱动阵列
Decade counter/divider 八路高电压，大电流达林顿晶体管阵
|
Motorola Inc
Motorola, Inc
ONSEMI[ON Semiconductor]
Motorola Mobility Holdings, Inc.
|
| L602 L602-L604 1370 L601 L604 L601-L603 L603 L601C |
DARLINGTON ARRAYS 达林顿阵
From old datasheet system
DARLINGTON ARRAYS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MG73P MG114P MG74P MG75P MG113P MG115P |
0.25レm Sea of Gates and Customer Structured Arrays 0.25盖茨和客户レ米海上结构阵
0.25m Sea of Gates and Customer Structured Arrays
0.25μm Sea of Gates and Customer Structured Arrays
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
OKI electronic componet...
|
| LC93300A LC22024A LC21005A LC22055A LC21444A LC211 |
(LC21005A - LC22123A) Gate Arrays Monolithic ICs
(LC93013A - LC93300A) Gate Arrays Monolithic ICs
|
Sanyo Electric
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
