| PART |
Description |
Maker |
| R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| R1LV0414D R1LV0414DSB-5SI R1LV0414DSB-7LI |
4M SRAM (256-kword × 16-bit)
4M SRAM (256-kword 】 16-bit)
|
http://
Renesas Electronics Corporation
|
| HM62V16256CLBP-5SL HM62V16256CLBP-7 HM62V16256CLBP |
4 M SRAM (256-kword x16-bit)
|
Renesas Electronics Corporation
|
| R1LV0416CSB-7LI |
Wide Temperature Range Version 4M SRAM (256-kword 16-bit)
|
Renesas Electronics Corporation.
|
| HM62V16256CLTTI-7 |
Wide Temperature Range Version 4 M SRAM (256-kword ? 16-bit)
|
Renesas Electronics Corporation
|
| HM62V16256CLTTI-7 HM62V16256CI |
Wide Temperature Range Version 4 M SRAM (256-kword ′ 16-bit)
|
Renesas Electronics Corporation
|
| HN58X2464FPI HN58X2408TI HN58X2408FPI HN58X2432TI |
Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) 两线串行接口8K的EEPROM中（1 - KWord的8位）/ 16K的EEPROM的（2 - KWord的8位）/ 32K的EEPROM中（4 KWord的8位）/ 64K的EEPROM中（8 KWord的8 -位）
|
Hitachi,Ltd.
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
