| PART |
Description |
Maker |
| UPD5101L UPD5101L-1 |
1024 Bit (256x4) Static CMOS RAM
|
NEC Electronics
|
| WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module
Access time:200 ns; 512K x 8 CMOS EEPROM module
Access time:250 ns; 512K x 8 CMOS EEPROM module
Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
| HM-6617/883 |
PROM, 2Kx8 CMOS, high speed, low power, Fast Access Time 90/120ns
|
Intersil Corporation
|
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
|
Intersil Corporation
|
| CDP68HC68T1D |
CMOS Serial Real-Time Clock With RAM and Power Sense/Control 1 TIMER(S), REAL TIME CLOCK, DIP16
|
Intersil, Corp.
|
| AM9112APC AM9112ADC |
SRAM,256X4,MOS,DIP,16PIN,PLASTIC
SRAM,256X4,MOS,DIP,16PIN,CERAMIC
From old datasheet system
|
AMD Inc
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| CDP68HC68T1 |
Clock, Real-Time, Serial with RAM, Power Sense/Control, CMOS
|
Intersil
|
| M38513M4 M38513M4-C56FP 3851GROUP M38512M4 M38513M |
Single-chip 8-bit CMOS microcomputer. PROM 16K bytes, RAM 512 bytes. One time PROM version.
Single-chip 8-bit CMOS microcomputer. PROM 24K bytes, RAM 640 bytes. One time PROM version.
Single Chip 8-Bit CMOS Microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
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