| PART |
Description |
Maker |
| FX-207 FX-107 FX-307 |
SELECTIVE SIGNALLING DEVICES 07 SERIES 选择性信号设07系列
|
Chicago Miniature Lighting,LLC
Chicago Miniature Lighting, LLC
|
| FX803 |
Audio Signalling Processor
|
CONSUMER MICROCIRCUITS LIMITED
|
| FX803J FX803LS FX803DW FX803 FX803LG |
FX803 Audio Signalling Processor
|
CMLMICRO[CML Microcircuits]
|
| MK50H27 MK50H27DIP MK50H27PLCC MK50H27Q |
Signalling System 7 Link Controller
|
STMICROELECTRONICS[STMicroelectronics]
|
| MK5027Q MK5027N |
SS7 SIGNALLING LINK CONTROLLER
SS7 SIGNALLING LINK CONTROLLER
|
ST Microelectronics
STMicroelectronics
|
| 5280 MK50H27Q |
SIGNALLING SYSTEM 7 LINK CONTROLLER
From old datasheet system
|
ST Microelectronics
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| SMD250 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
