| PART |
Description |
Maker |
| EVB3020A-IFBD LUCW3020CCS-DB W3020 |
GSM Multiband RF Transceiver
|
Agere Systems
|
| RF137 |
Transceiver For GSM Applications
|
Conexant
|
| MC13760 |
GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver
|
Motorola, Inc
|
| UAA3587 |
Complete, single-package GSM/GPRS/EDGE RF transceiver
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SKY74117 |
RF Transceiver for Quad-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions
|
| HD155121F |
RF Transceiver IC for GSM and PCN Dual band cellular systems
|
HITACHI[Hitachi Semiconductor]
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
