| PART |
Description |
Maker |
| CPDF24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQR5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| ESDA19-5SC6 ESDA17-5SC6 9201 ESDA19 ESDA17 |
TRANSILARRAY FOR ESD PROTECTION TRANSIL⑩ESD保护阵列
1.0 FPC Hsg Assy ZIF SMT 24t EmbsTpPkg
TRANSIL ARRAY FOR ESD PROTECTION
From old datasheet system
TRANSIL⑩ ARRAY FOR ESD PROTECTION
TRANSIL ARRAY FOR ESD PROTECTION
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MAX3000 MAX3000E MAX3000EEUP MAX3001EAUP MAX3001EE |
1.2V to 5.5V, /-15kV ESD-protected, 0.1mA, 35Mbp, 8-channel level translator
1.2V to 5.5V, 15kV ESD-Protected, 0.1UA, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V, ±15kV ESD-Protected, 0.1µA, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V / 15kV ESD-Protected / 0.1A / 35Mbps / 8-Channel Level Translators
1.2V to 5.5V, ±15kV ESD-Protected, 0.1UA, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V, 15kV ESD-Protected, 0.1A, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V, 【15kV ESD-Protected, 0.1レA, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V, 【15kV ESD-Protected, 0.1UA, 35Mbps, 8-Channel Level Translators
1.2V to 5.5V 15kV ESD-Protected 0.1UA 35Mbps 8-Channel Level Translators
RES 2.55K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
Fixed-Point Digital Signal Processor 532-FCBGA
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 30 min @ 1mA, 5V Optocoupler
1.2V to 5.5V, 5kV ESD-Protected, 0.1UA, 35Mbps, 8-Channel Level Translators 1.2V5.5Vamp;plusmn;15kV ESD保护.1µA5Mbps通道电平转换
1.2V to 5.5V, ??5kV ESD-Protected, 0.1UA, 35Mbps, 8-Channel Level Translators
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 5962-9159302MZX 5962-9159301MZX 5962-9159305MKX 59 |
x4 SRAM
±10kV ESD-Protected, Quad 5V RS-485/RS-422 Transmitters
±10kV ESD-Protected, Quad 5V RS-485/RS-422 Transmitters x4的SRAM
±80V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers x4的SRAM
|
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
|
