| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
LATTICE [Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| LC4128X LC4256ZC-45M132C1 LC4256ZC-75M132C1 LC4032 |
3.3V/2.5V/1.8V在系统可编程超快高密PDLs
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 4.2 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 3.7 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs
|
Lattice Semiconductor Corporation
http://
Lattice Semiconductor, Corp.
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI8840-90LB432 8840 ISPLSI8840-110LB432 ISPLSI |
In-System Programmable SuperBIG High Density PLD
In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| ISPLSI81080V-90LB272 ISPLSI81080V-90LB492 ISPLSI81 |
3.3V In-System Programmable SuperBIG High Density PLD
3.3V In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
| CBRHD-02 CBRHD-04 CBRHD10 CBRHD06 CBRHD02 CBRHD04 |
HIGH DENSITY SURFACE MOUNT AMP DUAL IN LINE BRIDGE RECTIFIER
HIGH DENSITY SURFACE MOUNT AMP DUAL IN LINE BRIDGE RECTIFIER
High Density Surface Mount 0.5AMP Dual in Line Bridge Rectifier(重复峰值反向电000V,高密度表面安.5 A双列直插桥式整流
High Density Surface Mount 0.5AMP Dual in Line Bridge Rectifier(重复峰值反向电00V,高密度表面安.5 A双列直插桥式整流
HIGH DENSITY SURFACE MOUNT ? AMP DUAL IN LINE BRIDGE RECTIFIER
|
Central Semiconductor Corp.
|
