| PART |
Description |
Maker |
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC
Nel Frequency Controls,inc
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS7C31026 AS7C31026-10 AS7C31026-10BC AS7C31026-10 |
5V/3.3V 64K16 CMOS SRAM
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
CONN SOCKET IC 16-PIN SMD
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85
CONN SOCKET IC 18-PIN SMD
8-Bit Parallel-Load Shift Registers 16-SO -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 5V/3.3V 64Kx6 CMOS SRAM
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| LRS1381 |
STACKED CHIP 32M FLASH AND 4M SRAM
|
Sharp Electrionic Components
|
| LRS1382 |
STACKED CHIP 32M FLASH AND 8M SRAM
|
Sharp Electrionic Components
|
| LRS1380 |
STACKED CHIP 32M (X 16) FLASH AND 4M (X 16) SRAM
|
Sanyo Semicon Device
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| V62C2162048L V62C2162048L-100B V62C2162048L-100T V |
PC123X5YUP0F 128K的超低功耗16 CMOS SRAM
Ultra Low Power 128K x 16 CMOS SRAM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| LRS1337 |
Stacked Chip 32M Flash Memory and 4M SRAM
|
SHARP[Sharp Electrionic Components]
|
