| PART |
Description |
Maker |
| HYB18H256321BF-10 HYB18H256321BF-11 HYB18H256321BF |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
http://
Qimonda AG
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39S256400 HYB39S256400T-10 HYB39S256400T-8 HYB3 |
256 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB39S256400DC-6 HYB39S256400DC-7 HYB39S256400DC-7 |
SDRAM Components - 256Mb (64Mx4) PC133 2-2-2
256 MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB18H512321BF-11/12/14 HYB18H512321BF-08/10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| E28F016XD-95 |
16-Mbit (1 Mbit x 16) DRAM-interface flash memory. Vcc=3.3 V, 50 pF load, 1.5 V I/O levels
|
Intel
|
