| PART |
Description |
Maker |
| L7558-01 L7558 |
High-speed/ high-power infrared LED for spatial light transmission
High-speed, high-power infrared LED for spatial light transmission
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
| ASDL-4360 ASDL-4360-C22 |
High Power and High Speed Infrared Emitter (885nm) in PLCC-2 Package
|
AVAGO TECHNOLOGIES LIMITED
|
| C4880-80 C4880-80-12A C4880-80-14A C4880-80-22A C4 |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity
Fast scan multi format Cooled CCD Camera
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; No. of Contacts:22; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Components
|
| G9204-256D G9494-512D G9494-256D |
Near infrared image sensor (0.9 to 1.7 μm) with high-speed data rate
|
Hamamatsu Corporation
|
